Crystal grow ofIndium Phosphide with VGF method
Introduction
The research article "Vertical Gradient Freeze Growth of Large Diameter, Low Defect Density Indium Phosphide" by E.M. Monberg explores growing big indium phosphide crystals using the Vertical Gradient Freeze method. Published during rapid technology changes, this study focuses on crystal growth techniques for making quality indium phosphide.
Additionally, the research aims to produce crystals for various applications. Good techniques help get crystals that work well in electronic devices. Furthermore, the study looked at this during a time of many improvements in semiconductors.
Summary
E.M. Monberg's article looks at using Vertical Gradient Freeze for indium phosphide crystals. This technique melts and re-freezes the material carefully in a container. Moreover, it forms high-quality crystals this way. The study wants large indium phosphide crystals with few defects. qualities. Qualities like size and few defects are important for making electronic and light-based devices better. The research examined the Vertical Gradient Freeze method for optimizing indium phosphide material grown this way.
A VGF PBN crucible and some PBN components
Use of PBN Crucibles in VGF Process
The researchers in this study chose Pyrolytic Boron Nitride (PBN) crucibles for the VGF process. PBN crucibles offer several advantages that make them highly suitable for crystal growth, particularly in the VGF method:
Material Purity:
PBN crucibles are known to have high purity. They contain few impurities. This lowers the risk of contaminating the growing InP crystal. Moreover, the researchers wanted low defect density in the crystals. Furthermore, PBN crucibles helped minimize defects from impurities during growth.
Chemical Inertness:
PBN crucibles show excellent resistance to reacting. This means they do not react with melted InP. Additionally, this prevents unwanted reactions and contamination during growth. Also, inertness contributed to making high-quality InP crystals with improved electricity and light properties.
Temperature Stability:
PBN crucibles possess great temperature resistance. This is crucial for VGF which uses extreme heat. Furthermore, VGF melts and re-freezes the material in the crucible. PBN crucibles can withstand these conditions without losing integrity. Also, stability ensures consistent, controlled growth for reproducible, quality crystals.
Alternative Crucible Materials
While PBN crucibles are commonly used in the VGF process for growing InP crystals, there are other crucible materials available that researchers may consider based on their specific requirements:Quartz Crucibles: Quartz crucibles are widely used in crystal growth processes due to their thermal stability and cost-effectiveness. However, they may not be the ideal choice for growing InP crystals with low defect densities, as they can introduce impurities that affect the crystal's quality.
Graphite Crucibles: Graphite crucibles are another option for crystal growth processes. They offer good thermal conductivity and are suitable for high-temperature applications. However, graphite crucibles may react with the molten InP material, leading to impurity contamination and compromised crystal quality.
Conclusion
The study explores VGF to grow large, low defect InP crystals. Researchers chose PBN for its purity, inertness and stability, important for quality. While quartz and graphite offer options, PBN offers advantages for VGF. Choosing the right crucible depends on needs considering purity, inertness and heat tolerance for high quality chips. The study highlights crucible importance in advanced electronics and light devices.