Germanium Telluride (GeTe) Sputtering Target
Composition: GeTe
Catalog No.DPTE32ST
Purity:99.95%
- Product Details
Germanium Telluride (GeTe) sputtering target specifications
Formula: GeTe
CAS No.: 12025-39-7
Max. dia. of flat disc sputter target: 12"
Typical lead time of GeTe sputtering target:4 weeks
Regular Dimensions and Price of Germanium Telluride (GeTe) Sputtering Target
| Product Name | Reference Price | |
| 2"diax 1/8"t Germanium Telluride sputtering target | 720 | Add to Chart |
| 3"diax 1/8"t Germanium Telluride sputtering target | 930 | Add to Chart |
| 2"diax 1/8"t GeTe sputtering target with In bonding to Cu bck plt | $810 | Add to Chart |
| 3"diax 1/8"t GeTe sputtering target with In bonding to Cu bck plt | $1,060 | Add to Chart |
About Our Sputtering Target
QSAM is a professional supplier of custom manufacturered R&D consumptions. Our equipment setup are flexible to meet various demands from wide range of customers for flat disc sputter targets. We are supporting US national labs and worldwide univeristies and researching facilities with our target material and other customized product. Please check here for the list of our other Tellurides sputter targets
About Germanium Telluride
Germanium Telluride (GeTe) is a phase-change material used in non-volatile memory technologies, such as phase-change random access memory (PCRAM). It exhibits fast and reversible switching between amorphous and crystalline states. Thin films of GeTe can be deposited using sputtering, providing the necessary material properties for high-performance memory devices.;
Germanium Telluride Sputtering Target Packaging
QSAMs sputter targets are vacuum sealed in plastic bags for shipping. We also use heavy foam to protect it. Common documents together with the sputter targets are packing list and analytical report e.g. COA
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