Influence of the crucible shape on growth of GaAs
----A Review of “Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique” by J. Amon*, F. Dumke, G. Muller
Introduction
Semiconductor materials are the backbone of modern electronics, with III-V compounds playing a crucial role in high-frequency communications and optoelectronic devices due to their superb electronic properties. However, twinning defects have remained a major roadblock impacting yield and quality during III-V semiconductor single crystal growth.
Twinning Defects and Their Impact
In vertical gradient freeze (VGF) growth, twin formation relates to factors like temperature gradients and fluctuations at the solid-liquid interface, interface shape, feedstock purity, and more. Twinning reduces usable single crystal yield and can lead to unstable electronic performance, severely limiting device capabilities.
PBN Crucibles
To address this, research by Amon, F. Dumke, and G. Müller examined using pyrolytic boron nitride (PBN) crucibles. With outstanding purity, chemical stability, and thermal stability, PBN enables excellent control of interface temperature conditions to minimize twinning. PBN’s dimensional stability at high temperatures also maintains consistent interface geometry to further reduce twin formation.
In this field, QSAM Inc. has become a leading PBN crucible manufacturer through quality products and service. We not only offer diverse customized PBN crucibles for R&D, but also provide technical support and service to ensure researchers can select suitable PBNware matching their experimental needs, improving semiconductor single crystal growth outcomes.
Crucible Shape Influence on Single Crystal Growth
The study finds that the shape of the crucible has a significant impact on the formation of facets and twins in the GaAs crystals. Amon’s team explored PBN crucibles with varying cone angles (60°, 90°, 120°, 144°) for silicon-doped gallium arsenide (GaAs) growth. Results showed the {111} edge length in the conical region decreased with increasing cone angle. The {111}As face is larger than the {111}Ga face and more readily produces twins.
The study also evaluates the performance of PBN crucibles in controlling crystal morphology. The authors find that PBN crucibles can help to reduce the formation of facets and twins and improve crystal quality.
Summary
Overall, the research paper provides valuable insights into the factors that influence crystal growth and morphology in GaAs crystals. The study demonstrates the importance of carefully selecting and optimizing crucible geometry for achieving high-quality crystals. The use of PBN crucibles is shown to be effective in controlling crystal morphology, and the authors provide recommendations for optimizing PBN crucible design to improve crystal quality and homogeneity.
In conclusion, the research paper "Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique" provides a detailed analysis of the impact of crucible geometry on crystal growth and morphology. The study highlights the important role of PBN crucibles in controlling crystal morphology and improving crystal quality. The findings of the study can be useful for researchers and engineers in the field of semiconductor crystal growth, as well as for anyone interested in the properties and applications of PBN.